Novel Electro-explosive Device Incorporating a Thin-film Negative Temperature Coefficient Thermistor

In this letter, a novel, low initiation energy, radio frequency (RF) immunity, semiconductor-based semiconductor bridge chip was fabricated with micro/nano processing technology. The integrated semiconductor bridge (ISCB) chip consists of a polysilicon resistor bridge and thin film negative temperature coefficient (NTC) thermistor. The film NTC thermistor provide protection against RF events. The characteristics of film NTC thermistors and electric discharge characteristic of the ISCB chip was tested. Meanwhile, the safety of the ISCB was also tested with constant current firing set. The results showed that the ISCB chip provided advantages such as extremely immunity to RF hazards, low all-fire energy(22μF/22V), fast function time and economical manufacturing with tiny explosive initiators.