Radiation Hardening Performance of a Single-Ended-to-Differential Amplifier in SiGe Bi-CMOS Process for Space Receiver Systems

This paper analyzes the single event effects (SEE) measurement and results of single ended to differential Multioctave amplifier designed using SiGe Bi-CMOS process. The amplifier having 3 dB bandwidth of 11 GHz, noise figure is 7 dB, OP1dB of 12 dBm and OIP3 is 35 dBm. These performance characteristics led the device as a bridge between high performance Low-noise amplifier (LNA) and differential Analog to Digital Converter (ADC). The single event latchup(SEL) and single event transients(SET) effects of the amplifier are presented in this paper. No latch up events were observed up to a linear energy transfer (LET) of 82 MeV.cm2/mg at 125 °C.