GaN-Based Inductive Charging DOS Pulse Generator Using IGBT-Isolated Modules With Bipolar Output and Adjustable Stacking for DBD Plasma Jet

High-frequency, fast-rising nanosecond pulses have attracted considerable interest in various fields, particularly for driving dielectric barrier discharge (DBD) plasma jets. The rapid reverse cutoff of diodes enables the diode opening switch (DOS) to generate ultrashort nanosecond pulses. However, it relies on small resistors and high-power DC source for high-frequency operation, leading to low charging voltage gain and significant charging losses. Additionally, the limited controllability of diodes makes it difficult to adjust output polarity. Herein, a new DOS utilizing GaN with LC charging (L-DOS) is proposed. An inductor stores energy that is dissipated in charging resistor of traditional DOS, achieving a higher charging voltage gain. Additionally, a new modular L-DOS circuit with IGBT isolation is designed. IGBT provides a controlled current path for the fast-rising pulses generated by the diodes, allowing for bipolar output with adjustable stacking. Results show that L-DOS achieves fivefold increase in charging voltage gain with only 25% of the charging loss of traditional DOS, thereby enabling the generation of 5.8 kV pulses with duration of 6.8 ns under low input voltage of 100 V. The 4-stage prototype can not only output bipolar pulses but also achieve amplitude stacking up to 10.6 kV and bipolar frequency stacking up to 2 MHz.