Thermal Modeling and Characterizationof Coaxial Through Silicon Via for 3D RF Integrated Circuits

This study investigates the thermal characteristics of coaxial through silicon via (C-TSV) structures to optimize structural parameters for enhanced heat dissipation. As 3D integration drives the advancement of high-performance systems, TSV technology has gained attention for improving signal transmission and data rates. Coaxial TSVs are promising for high-frequency applications with benefits in electromagnetic shielding and interference resistance, but their thermal management remains challenging. Using finite element simulation in COMSOL, a C-TSV model was developed to analyze temperature distribution under varying parameters. An orthogonal experimental design evaluated factors such as copper ring thickness, dielectric layer thickness, dielectric material, and TSV spacing. Results show that dielectric material has the greatest impact on thermal performance, followed by TSV spacing, copper ring thickness, and dielectric layer thickness. For BCB as the dielectric material, the optimal parameter combination was determined, offering valuable insights for coaxial TSV design.