Electronic Metadevice Switches with Input Third-Order Intercept Point Beyond 1 kW/mm

Microwave and millimeter-wave switches are essential components in modern telecommunication systems, where high linearity is crucial to maintaining signal fidelity. In this work, we present theoretical, numerical, and experimental results demonstrating the exceptionally linear behavior of electronic metadevice switches. While electronic metadevices are well known for their ultrahigh switching cutoff frequency figure-of-merit, we investigate their performance from a linearity standpoint. We show that reducing the size of subwavelength features in these devices leads to marked enhancements in linearity. Measurements on InAlN/GaN-based electronic metadevices reveal an input third-order intercept point (IIP3) exceeding 1 kW mm⁻¹, in close agreement with theoretical predictions. These results underscore the promise of electronic metadevices in advancing the next generation of high-performance telecommunication circuits.