Comparative Analysis of Two Parallel Current Sharing Technologies of Silicon Carbide

This paper focuses on the dynamic current sharing problem of multi-tube parallel SiC MOSFET in high-power applications, analyzes the key influencing factors, and conducts a comparative analysis of the two current sharing methods. In megawatt-level power systems, the demand for multi-tube parallel topologies has soared, but the problem of current dynamic imbalance is prominent. Although SiC MOSFETs suppress static uneven current through the positive temperature coefficient of onresistance, dynamic current sharing remains a technical difficulty. The discreteness of parameters such as threshold voltage, transconductance, parasitic inductance at the source, and driving resistance significantly aggravates the dynamic current imbalance. After that, we analyzed and compared the two current sharing methods. Among them, the active gate drive technology controls the current sharing in real time by actively adjusting the gate signal. The drain-coupled inductor technology, on the other hand, forces current balancing through magnetic coupling. Finally, it was verified through simulation that both can effectively improve the current-sharing performance. Finally, the advantages and disadvantages of both were compared and analyzed through simulation, so that we can adopt a more appropriate method in future engineering practice.