Fabry–Perot Semiconductor Laser With High-Temperature Operation

We experimentally demonstrate a 1.31- $\mu $ m Fabry-Perot (FP) semiconductor laser developed for data communications at temperatures exceeding $130~^{\circ }\rm {C}$ based on InGaAlAs/InP material system. By optimizing the epi-structure as well as doping profiles, we were able to demonstrate that the device can be operated at ambient temperature as high as $150~^{\circ }\rm {C}$ with an output power of about 2.8 mW when the cavity length is $300~\mu $ m. This work paves the way for high-temperature applications, making it feasible to develop low-cost devices without the additional cooling equipments.