Current Status of Bulk β-Ga₂O₃ and β-(AlxGa₁-ₓ)₂O₃ Crystal Growth

$\beta $ -Ga2O3 and its solid solutions $\beta $ -(AlxGa ${}_{\text {1-x}}$ )2O3 are considered as potential candidate materials for next generation power devices due to their ultra-wide bandgaps (4.85–5.6 eV) and large breakdown electric field ( $\geq 8$ MVcm ${}^{\text {-1}}$ ). Wafers prepared from bulk crystals constitute a foundation in a device fabrication chain. The present report briefly discusses thermodynamics, challenges in growing bulk crystals from the melt by different methods, which enable at least 2-inch diameter wafers, crystal structural quality, electrical properties, and factors affecting crystal growth costs.