Design of SPDT switching circuit with asymmetric structure based on 0.25um GaN HEMT process

An asymmetric single pole double throw (SPDT) switch circuit has been developed using a 0.25μm gallium nitride (GaN) high electron mobility transistor (HEMT) process. It is suitable for use as a single-chip front-end for next-generation phased-array transmit/receive (T/R) modules. The proposed GaN SPDT microwave monolithic integrated circuit switch operates in the 2-12 GHz band with good insertion loss (better than 0.9 dB) at the receiver (Rx) and good isolation (better than 30 dB) at the transmitter (Tx). It also has a very high-power handling capability, and simulation shows a 0.1dB compression point of 41.1dBm at 7GHz.