Ultra-Low Specific on-Resistance Ldmos With Both Super Junction And Super Field Plate Techniques

The super junction (SJ) and the super field plate (SuFP) are both important charge balance effect realization techniques. However, they have not been used together. This study presents the first investigation into the electrical characteristics of a novel SJ-SuFP-LDMOS device, integrating Super Junction and Super Finger Pattern technologies within a lateral double-diffused MOS framework. Our investigations proved that, for the SJ-SuFP-LDMOS, the SJ structure improves the surface doping concentration, meanwhile the SuFP eliminates the substrate assistant depletion effect and enhances the width ration of N-pillar to P-pillar. Therefore, the SJ-SuFP-LDMOS has ultra-low specific on-resistance due to the combination effect of SJ and SuFP.