High-Precision BGR Design with Advanced Curvature Compensation & Optimized Layout in 28 nm CMOS Technology

This paper introduces a high-precision, lowpower Bandgap Reference (BGR) circuit designed using UMC 28 nm CMOS technology. The proposed BGR circuit achieves a stable reference voltage of 0.647 V with a temperature coefficient of $17.69 \mathrm{ppm} /{ }^{\circ} \mathrm{C}$ across a temperature range of -40 °C to $125{ }^{\circ} \mathrm{C}$. The utilization of advanced curvature compensation techniques involving subthreshold region MOSFET current, the design ensures minimal power consumption of $38.62 \mu \mathrm{~W}$. The optimized layout with $0.082 \mathrm{~mm}^{2}$ area, minimizes parasitic effects and maintains robust signal integrity, making the circuit suitable for precision analog and low-voltage applications.