Improved Switching and Synaptic Behavior of Flexible HfOₓ-Based Resistive Memory Devices With a Chalcogenide Layer

The effect of the GeSeTe (GST) chalcogenide layer on the switching and synaptic behavior of flexible HfOx-based resistive memory devices has been reported. The GST layer dramatically improves the cycle-to-cycle uniformity and controls the gradual SET and RESET with multilevel cell (MLC) behavior by excellent thermal confinement and oxygen modulation. The device also exhibits high endurance (~3000 dc cycles) and long retention ( $10^{{4}}$ s). The device maintains an adequate memory window even in flexed conditions and at higher temperatures ( $85~^{\circ }$ C). The device also shows exceptional synaptic learning behaviors such as spike-rate-dependent plasticity (SRDP), long-term potentiation (LTP), long-term depression (LTD), paired-pulse facilitation (PPF), and post-tetanic potentiation (PTP), which is appropriate for neuromorphic computing.