Si-Tip with Modulation and Extraction Gates for Precise Active Control of Stable Field Electron Emission

P-type Si-tip with integrated vertically stacked modulator (bottom gate) and extractor (top gate) was proposed for actively controlling the field electron emission. The modulator voltage controls the electron supply from p-type Si substrate, while the extractor voltage induces electron emission. Field emission testing presented a modulator-voltage-controlled field emission with on/off current ratio of 747, precise current modulation accuracy of 33 pA/mV and optimized current stability of 3.7%. The double-gated device has great potential in modern vacuum nanoelectronics application.