The Latest Fabrication and Experimental Results of 1.2 kV Split-Gate 4H-SiC MOSFET with P+ Buffer

This paper experimentally validates the concept of Split-Gate 4H-SiC MOSFETs with P+ buffer (SG-PB-MOS) at 1.2 kV, demonstrating its superiority in both static and dynamic performance over conventional MOSFETs (Conv-MOS). The latest fabrication results for the 80 mΩ class devices, with a high yield of 94%, are presented. The static and dynamic performance of the fabricated devices is comprehensively characterized. Experimental results reveal that, compared to Conv-MOS, SG-PB-MOS exhibits a 1.27× longer short-circuit withstand time (SCWT) and a 3.01× improvement in high-frequency figure-of-merit (HF-FOM, $R$on× $C$rss) at 600 V drain voltage. Key trade-offs, including $R$on & BV, $(R_{\mathrm{o}\mathrm{n}})$ & SCWT, and $(R_{\mathrm{o}\mathrm{n}})$ & $C$gd are enhanced, making the SG-PB-MOSFET a potential candidate for high-reliability and high-frequency applications.