Avalanche and Short Circuit Withstand Capabilities in 3.3 kV-Class SiC Superjunction MOSFET

3.3 kV-class silicon carbide superjunction (SJ) MOSFETs with three different column lengths were fabricated, and the influence of column length on their avalanche and short-circuit withstand capabilities were investigated. By optimizing JTE structure, high avalanche withstand capability comparable to that of non-SJ device was achieved, independent of column length. This is the first demonstration of avalanche capability for SiC SJ devices. Short circuit withstand capability was superior to that of non-SJ device at low supply voltage, similar to 1.2 kV-class. However, it significantly decreased with increasing the column length at high supply voltage due to the heat generation at the column bottom.