An Improved TCAD Simulation Procedure for Platinum-Diffused Silicon Power Diodes

Silicon bipolar power diodes require carrier lifetime engineering to reduce switching time. Platinum diffusion is the most used method to achieve lifetime reduction. Platinum diffusion in silicon is a well understood process, however, its modeling for TCAD device simulations is lacking. In this paper, we propose a new physically precise method of modeling platinum-induced defects in silicon power diodes. We show that the precision of this new method enables truly predictive simulation of silicon power diodes.