A Study on Fault Prediction and Redundancy Control of Parallel SiC-MOSFETs

This paper describes a fault prediction and redundancy control of parallel SiC-MOSFETs. In order to safely stop the predictive failure devices, we applied the “nanosecond-level switching timing synchronization by individual control” reported in ISPSD2024 and the newly developed “Fault Prediction and Redundancy Control of Parallel” [1]. The control method developed in this study uses the switching time shift as the criteria. This is due to the shift in switching times of the degraded SiC-MOSFETs. This developed control prevents non-faulty SiC-MOSFETs from becoming over-current and safely stops devices that show signs of predicted failure. This makes it possible to increase the robustness of the system. A three-phase L-load measurement equipment is fabricated to demonstrate that the developed control can shut down fault predictive SiC-MOSFETs after output suppression.