Temperature and Drain-Voltage Effects on Negative Differential Resistance in a 1-D Channel Gate-All-Around FET

We report on the investigation of gate-voltage controlled Negative Differential Resistance (NDR) in a 1D carbon nanotube (CNT) active conducting channel Gate-AllAround Field Effect Transistor (GAAFET). In particular, the effects of temperatures, ranging from 4 K to 450 K, and different drain voltages are explored. It is found that the onset of NDR largely occurs at a specific gate voltage for a particular device topology. The slope of the differential resistance is largely controlled by the drain voltage, with higher drain voltages resulting in a greater slope. The temperature largely influences the current, with lower temperatures resulting in higher currents.