Inp/Si Heterogeneously Integrated p-i-n Type Mach-Zehnder Modulator by Utilizing Chip-on-Wafer Bonding Method

We demonstrate an InP/Si heterogeneously integrated p-i-n type Mach-Zehnder modulator by using chip-on-wafer bonding method. The phase modulation efficiency is lower than $1.0 ~\mathrm{V} \pi \cdot ~\text{cm}$. The electrical/optical 3 dB bandwidth is as high as 67.5 GHz.