A Physics-Based Compact I-V Model for Short-Channel MoS2 FETs

We present a physics-based compact I-V model for short-channel MoS2 FETs, addressing critical short-channel effects such as drain-induced barrier lowering, mobility degradation, and velocity saturation. This model extends our previous long-channel framework and is validated against experimental data from fabricated devices using processing steps at Intel Foundry Technology Research Labs, showing excellent agreement down to 60 nm channel length,