The Family of MVSG Compact Models for High-Voltage Gallium-Nitride Devices

MIT Virtual-source Gallium-nitride (MVSG) FET compact model was first introduced as a physics-based compact model for radio-frequency (RF) GaN transistors in 2012, and later been selected as a CMC-approved industry standard GaN transistor model. With the rapid evolution and innovation in the field of GaN technology, continuous efforts have been made to improve, update and expand the capabilities of the MVSG models. This paper first provides an overview of the basics of the MVSG compact models. We will then introduce the variety of compact models in the MVSG family for GaN-based transistors, multi-channel diodes, and transmission-line resistors. With the accuracy, scalability and flexibility, the MVSG family of physics-based GaN device compact models provide a solid foundation for the development of Process Design Kit for HV GaN technology, and also serves as useful research vehicles to explore GaN-based device physics, device engineering, and circuit design.