Unveiling Of Nanosheet FET Parameters For Low Power Applications

As semiconductor components move beyond the 5nm node, traditional FinFET designs face increasing limitations in power efficiency and electrostatic control. Nanosheet field effect transistors (NSFETs), which offer improved electrostatic integrity, higher drive current, and lower leakage currents, have emerged as a promising substitute. This work provides a comprehensive analysis of NSFET advancements, including conventional NSFETs, stacked nanosheet FETs, and Core-Insulator Embedded NSFETs (C-NSFETs). Key performance indicators such as, on/off current ratio, maximum transconductance, manufacturing challenges, and future direction are discussed to highlight the role of NSFETs in facilitating continuous CMOS growth. This study also looks into how NSFET efficiency is affected by changes in the method, new materials, and applications in designing circuits. According to the study, C-NSFETs provide superior electrical control in comparison to conventional NSFETs; nevertheless, their widespread use needs further advancements in temperature control and variability suppression.