Condition Monitoring Method for the Multi-Chip IGBT Module Based on the Radiator Temperature

Multi-chip insulated gate bipolar transistor (IGBT) modules have been widely used in high-power converters. But the reliability of multi-chip IGBT module is low. To solve this problem, this article proposes a condition monitoring method for the multichip IGBT module based on the radiator temperature. We show that the heating rate of the radiator decreases during the aging process of the IGBT module. Simulations and experiments are conducted to verify the proposed method. Compared to existing methods, this method not only can monitor the health of multiple devices simultaneously but also realizes the online application.