Performance Analysis of Gate All Around Nanowire- FET in Subthreshold Region on 14nm Channel Length

In order to preserve performance and power efficiency at the nano technology, shorter channel FET devices with minimum subthreshold swing are becoming more essential as semiconductor technology approaches to 14 nm technology node. A viable alternative to conventional MOSFETs and FinFETs is needed and Gate all around FET is one of the promising substitutes in the nano regime. In a Gate All Around device, the gate is wrapped over the entire channel, therefore improved electrostatic control and more immune to short channel effects. This work analyzes the behavior of a GAA nanowire FET at a 14 nm channel length, providing a thorough performance analysis in the subthreshold region. The device characteristics are compared with the variation in thickness of nanowire channel. A significant breakthrough of this work is the achievement of a subthreshold swing of 61 mV/decade, which closely approaches the fundamental limit of MOSFETs, demonstrating superior switching characteristics and higher transconductance as compared to a 28 nm channel length device. The simulation of the device is carried out with Sentaurus TCAD to evaluate key metrics like drive current, transconductance, and subthreshold swing for various nanowire diameters and gate materials.