Interaction of Total Ionizing Dose Effect and Hot Carrier Degradation in Bulk I/O-FinFETs

In this article, the interaction of total ionizing dose (TID) effect and hot carrier injection (HCI) degradation in bulk I/O-FIN field-effect transistors (FinFETs) is investigated. The results for stress post radiation (SPR) show that the HCI degradation of irradiated devices is greater than that of unirradiated, and the irradiated devices undergo rapid recovery by HCI stress for a very short time. With the increase of stress time, the influence of TID on HCI decreases and the off-state leakage current after irradiation does not recover to the initial value of the device. The electrons injection into the shallow trench isolation (STI) during HCI is suggested as the reason for parameters recovery after irradiation. While the experiment results of radiation post stress (RPS) show that there is no obvious influence of HCI on TID, since there is no electrons injection into STI region during HCI before TID. The irradiation experiment under HCI bias shows that the combination of these two effects causes the change of device characteristics. The mechanism of interaction between TID and HCI is revealed.