Low-Noise and High-Survivability 55–65-GHz GaN MMIC LNA for Millimeter-Wave Communications

This letter reports the design, fabrication, and measurement of a high-input-power-survivability V-band (operating at 50–70 GHz) GaN monolithic microwave integrated circuit (MMIC) LNA with an average measured noise figure of 2.08 dB in the 55–65-GHz range and a measured noise figure (NF) of 1.97 dB at 65 GHz. The 40-nm-gate-length GaN-on-SiC MMIC process used enables a record low noise figure for high-frequency GaN technology and a high-input-power survivability, $\ge 27$ dBm, not possible on traditional high-performance GaAs and InP MMIC processes. This is a state-of-the-art result in terms of both lowest noise figure and highest survivability for millimeter-wave GaN MMIC LNA. A technique to further improve survivability is implemented and measured. Applications are in terrestrial and spaceborne communication links in contested-spectrum and hostile environments.