The Response Frequency of Interface Traps Using a Dual-Frequency Charge-Pumping Method and Its Correlation With 1/f Noise

This study shows a novel dual-frequency charge-pumping method, developed to quantitatively characterize the frequency response characteristics of interface traps at the HfO2/Si interface. The response frequency of the interface traps ( $f_{it}$ ), or their capture/emission time, has been accurately evaluated in the range of 5-100 MHz across different energy levels by modulating the charge-pumping voltage waveforms. The analysis of $f_{it}$ provides valuable insights into the 1/f noise behavior of MOS devices, as confirmed by the observed correlation between 1/f noise and $f_{it}$ in the typical HfO2/Si n-MOSFETs. Additionally, it was found that the gate oxide traps are predominantly generated at a distance of 0.45 nm away from the HfO2/Si interface, and at an energy of 0.33 eV below conduction band minimum ( $E_{c}$ ), under a PBTI stress.