A Multiphysics Simulation Framework for Electromigration Risk Assessment in Modern Interconnects

As integrated circuits continue to downscale and current density in interconnects increases, electromigration (EM) concerns have gained significant attention. In this study, we present an EM risk assessment framework based on a multiphysics coupling model for analyzing the reliability of modern interconnects. To address the complexity of EM failure mechanisms, the electrical model, mechanical model, material transport model, and phase-field void evolution model are employed to describe the stages of void nucleation and evolution. A fully automated toolchain spanning from layout feature extraction to multiphysics EM simulation is also established. Through systematic investigations of four characteristic structures extracted from the layout, this study identifies two distinct EM failure modes with differences in failure locations and evolution speeds, which are governed by the vacancy redistribution and the effect of microstructures in modern interconnects.