A Novel Single Event Irradiation-Hardened SOI Trench Gate LIGBT

A trench gate lateral insulated gate bipolar transistor with an extra hole path (HP LIGBT) is proposed to ease the current concentration around the trench gate so as to suppress single-event burnout (SEB) and reduce the maximum electric field at the gate oxide so as to lower the risk of single-event gate rupture (SEGR). The SEB position of the trench gate LIGBT in comparison with the trench gate laterally diffused metal-oxide semiconductor (LDMOS) is studied by TCAD simulations with lattice heating model, where the former fails around the trench gate but the latter fails at the drain contact. The most sensitive position for inducing SEB is found to be both at the n-drift region near the emitter or source side. Simulation results show that the threshold voltage of triggering SEB of the HP LIGBT for ion species with high linear energy transfer (LET) values of 76.56 MeV $\cdot $ cm2/mg can be 46% higher than that of the conventional LIGBT. Moreover, the maximum electric field at the gate oxide of HP LIGBT is 55% lower than the conventional LIGBT.