Simulation of Double Pulse Test Platform with SiC MOSFET/Si IGBT Hybrid Switch Power Module of One/Two Si IGBTs and Single SiC MOSFET

The parallel connection of Si IGBT/SiC MOSFETs is an important research topic to achieve the balance between cost and performance and to utilize the characteristics of each. In this study, Matlab/Simulink is used to import the spice model provided by the manufacturer and the hybrid switch power modules of 1 SiC/2 Si IGBTs and 1 SiC/1 Si IGBT are tested by Double Pulse Test with consideration of the stray parameters. At the same time, three switching methods are also used in this study to calculate and simulate the losses of hybrid switch power modules composed of different numbers of Si IGBTs and single SiC MOSFETs in proposed Double Pulse Test.