Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects

With device dimensions shrink, traditional plane-field effect transistors no longer meet the demands of the development. As a novel type of three-dimensional device, 14 nm SOI FinFETs has been widely research attention and application due to the superior performance. However, Hot Carrier Injection (HCI) at different temperatures and its synergistic effect with Self-Heating Effect (SHE) synergistic effects have serious effects on the reliability of 14 nm SOI FinFETs and need to be solved. Therefore, this work uses Technology Computer-Aided Design to explore the electrical performance degradation of the 14 nm SOI FinFETs to reveal the damage mechanism. Simulation results demonstrate the threshold voltage shift and electron mobility decrease of the device. The increase in ambient temperature and the rise in lattice temperature induced by SHE will exacerbate the HCI effect, resulting in more hot charge carriers being injected into the gate oxide layer. Based on results, achieving more efficient thermal management by enhancing the heat dissipation performance of the drain and its extended regions can provide important theoretical support for reliability design.