Empirical Programming Protocol and Monitor-Free Multi-Level Modulation for Memristors

Hands-on memristor operations for multi-level applications present significant challenges due to the inherent uncertainty in memristor responses and the frequent occurrence of device failures. For practical implementation, memristors must demonstrate well-defined bipolar and multi-level modulation behaviours that remain reproducible over extended operations. To facilitate rapid and comprehensive multi-level ${TiO}_{2}$ memristor characterisation, this paper introduces an empirical tuning protocol. Building on the memristor's ability to achieve voltagedependent saturation resistance, the concept of monitor-free multi-level programming is proposed, with an 8-level experimental attempt conducted for validation.