Method for Measurement of Source Resistance of Top-Contact Pentacene Organic Thin-Film Transistors

In this article, the source resistance of top-contact bottom gate (TCBG) organic thin-film transistor (OTFT) was directly measured using another contact parallel to source contact. Three-dimensional numerical simulation was used to validate the proposed method. TCBG OTFT with pentacene as active layer and poly(4-vinyl phenol) (PVP) as dielectric layer was used to calculate the source resistance. Gold was deposited through shadow mask to fabricate OTFT and contacts.