A Comprehensive Modeling Framework for Charge-Sharing and Bias-Dependent Single Event Transient Prediction in FinFETs

With the scaling of integrated circuit technologies, charge-sharing effects induced by single-event transient (SET) have become a critical reliability concern in radiation environments. However, conventional circuit-level SET simulation methodologies fail to account for charge-sharing mechanisms among adjacent devices. This work proposes a physics-aware simulation framework combining technology computer-aided design (TCAD) device simulations and circuit-level modeling to address this limitation. The methodology involves extracting transient current waveform parameters through 3D TCAD simulations under varied ion strike locations. Spatially-dependent behavioral models are then developed via multivariate regression of these parameters, which are subsequently integrated into bias-dependent SET analytical models. To enable circuit-level analysis, built-in current sources characterized by the developed models are inserted at sensitive nodes during layout-aware simulations. The proposed approach is validated through comparative analysis between TCAD mixed-mode simulations and circuit-level predictions in a 12-nm FinFET test structure, demonstrating smaller deviation in critical SET metrics. Compared to existing methods, this co-simulation strategy incorporates both charge-sharing effects and bias voltage dependencies while maintaining computational efficiency. The implemented framework enables early-stage evaluation of radiation-induced soft errors during physical design phases, providing critical insights for radiation-hardened-by-design strategies in advanced process nodes.