4-to-2 Optoelectronic Encoders Utilizing Quantum Well Heterojunction Phototransistors on the Light-Emitting Transistor Platform

This letter presents the design, fabrication, and characterization of a 4-to-2 optoelectronic encoder utilizing the light-emitting transistors (LETs) platform. By employing a GaAs-based heterojunction structure with an InGaAs quantum well (QW), the LET architecture significantly enhances light emitting, enabling efficient optical-to-electrical signal conversion. This marks the first successful demonstration of an LET-based encoder circuit, advancing monolithic integration for optical receiver applications and contributing to the development of high-performance optoelectronic systems. This work highlights the potential of LETs as a versatile platform for scalable and efficient photonic integrated circuits.