Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors Through Boron Incorporation

This letter presents high-temperature ferroelectric characterization of 40 nm ${\mathrm {Al}}_{\text {1-x-y}}$ BxScyN (AlBScN) thin film capacitors grown by co-sputtering Al0.89B0.11 and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37 nm. Ferroelectric switching, characterized by positive-up-negative-down (PUND) measurements up to 600° C, exhibited a linear decrease in coercive fields from 6.2 MV/cm at room temperature to 4.2 MV/cm at 600°C, while remanent polarization remained stable with temperature. Direct current I–V measurements highlight a significant suppression of leakage currents, over two orders of magnitude lower compared to AlScN capacitors fabricated under similar conditions. These results position AlBScN thin films as strong candidates for ferroelectric applications in extreme environments.