Aluminum Nitride Interlayer Dielectric Integration for Effective Heat Dissipation of 3D-IC

To address the thermal challenges of three-dimensional integrated circuits, we explored the integration of aluminum nitride with high thermal conductivity as a novel interlayer dielectric in a back end of line process. After systematically examining potential challenges associated with introducing AlN—such as residual stress, copper diffusivity, adhesion—we successfully demonstrated Cu embedding by electroplating within trenches formed in an AlN layer.