Scalable Fabrication and Demonstration of the First Fully Integrated 14nm 2-Stack SOM (Selector Only Memory) Device

This study successfully demonstrates the fabrication and operation of the first fully integrated 14nm 2-stack SOM (Selector Only Memory) devices with a 1-Gb main cell array. A read window over 750mV is achieved across all decks and all cell characteristics are maintained up to the 14nm node with the advanced processes, providing the scalability of SOM device. Furthermore, comprehensive reliability evaluations is conducted, confirming the feasibility of the mass production.