A Schottky Junction as a Hole Injector for Enhancing Erase Operation of 3D Flash Memory in CMOS Directly Bonded to Array (CBA) Era with Over 1,000 Word Lines

This paper presents an innovative structure for 3D flash memory, integrating a Schottky junction into source and channel (CNL) contacts in the CMOS Directly Bonded to Array (CBA) architecture. This structure achieves over 1,000 times more holes than the conventional gate-induced drain leakage (GIDL) method for erasing cells. This breakthrough overcomes the limitations of word line (WL) stacking caused by insufficient hole current in future 3D flash memory.