High Resolution Well-Plasma Detection Device in 16Nm Cmos Finfet Process

This paper presents a firstly developed FinFET well plasma charge detection device in 16 nm FinFET CMOS logic process. The device can precisely record the plasma-induced FinFET well charges from BEOL plasma processes, also to detect the charge polarization and quantification in plasma steps. A novel differential pair-structure is further implemented to detect the charging damages from well-to-well interference in dynamic plasma processes. The detection devices aid in understanding the transient well-plasma charging mechanism and quantifying the well plasma damages of FinFET gate dielectric from BEOL process steps. It surely provides an accurate monitoring and optimizing solution of the well plasma induced charges on the whole 12-inch wafer in 16nm FinFET technologies and beyond.