Beyond RibbonFET: Energy Efficiency Innovations to Drive Technology and Design for the Next Decade

As the semiconductor industry adopts major technology advances of RibbonFET and Backside Power, innovation continues unabated to build upon these breakthroughs and drive ever more performance, energy efficiency, and area scaling well into the future. Transistor geometry, materials, and connectivity improvements dominate near-term silicon roadmaps, but incorporation of new transistor physics to enable sub-0.3V operating voltages will be needed once the classical Gate-All-Around (GAA) era reaches full maturity.