Precise Modeling of SiC MOSFET Module and its Switching Loop Based on Experimental Waveforms

Accurate modeling of fast-switching SiC power MOSFETs is a necessity to properly design high-power converters. Among the many modeling methods, the behavioral approach seems to give the best effort-to-accuracy ratio, also for various operating points. Thus, in this paper, a behavioral model of a 1200 V/4.2 mΩ SiC MOSFET MSCSM120AM042CT6LIAG power module, along with the whole power circuit, is prepared. The model is based on analytical and experimental data and faithfully represents the behavior of the power circuit in dynamic states for various operating points. The model is experimentally validated with 600 V/400 A double-pulse test, and the results are in high agreement with the experimental waveforms. Therefore, the model can be successfully employed in the design of high-power converters and in studying the switching processes.