Reliability of HfO2-based Ferroelectric Memory Devices

The discovery of ferroelectricity in HfO based materials have raised memory industry's interest in ferroelectric memories because of the CMOS compatibility and scalability. Various ferroelectric memory structures such as ferroelectric FET (FeFET), ferroelectric RAM (FeRAM) and ferroelectric tunnel junction (FTJ) have been demonstrated using ferroelectric HfO (FE-HfO) based materials, and the performances and reliabilities have been continuously improved [1–4]. Among these memory devices, FeFET and FTJ have especially attracted much attention because non-destructive readout scheme is appreciable which leads to power efficient operation.