Impact of Cumulative Pulsed Laser Irradiation on Recrystallization of Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface

During the fabrication of complementary metal-oxide-semiconductor (CMOS) image sensors, metallic impurities contaminating in the device active regions generate dark current and white spots [1], [2]. In addition, in a Czochralski (CZ)-grown silicon (Si) substrate, oxygen is dissolved at a concentration of 1.0×10¹⁷-1.0×10¹⁸ atoms/cm³, and the out-diffused oxygen in device active regions negatively affects the performance of the CMOS image sensors [3]. Moreover, from the viewpoint of device structure, there are interface state defects at the SiO2/Si interface in isolation regions such as shallow trench isolation (STI) and deep trench isolation (DTI) regions, which cause the fixed pattern noise [4].