Fabrication of NbO2 based IMT Selector Devices via a 300mm Based Memory Test Vehicle

The demand for differentiated devices in the backend-of-line increases necessitates the need for a test vehicle that enables the integration and electrical characterization of such devices. An Insulator-Metal Transition based NbO2 device was integrated onto the NY CREATES/UAlbany memory test vehicle (MTV) utilizing a 65nm process technology to fabricate nanoscale devices with a footprint down to 120x120 nm². NbO2, the metastable allotrope of niobium oxide, was deposited onto coupons diced out of the 300mm MTV. This occurred in an oxygen-controlled environment yielding phase-pure NbO2 after a 750 °C crystallization anneal. An endurance of at least 25x10⁶ cycles was demonstrated with an Roff/Ron ratio above 100 and an extrapolation towards >2000 with further device scaling.