The Hot Carrier Injection Induced Degradation in MOS Transistors with Subthreshold Hump and the Corelated Impacts on Low Frequency Noise for Low Power Analog Designs

This paper presents a comparative study of the impact of hot carrier injection (HCI) on the degradation of the electrical performance in low-voltage MOS transistors with a subthreshold hump. DC performance was measured at the device level before and after HCI stress, along with different baking durations to understand the degradation trends of the parasitic edge-MOS device versus the intrinsic-MOS device. Additionally, 1/f noise was measured to investigate the underlying mechanisms. Our findings confirm that the edge-MOS degrades more rapidly than the intrinsic-MOS, offering insights for low-power analog designs.