Application of Circuit Model Based on Self-Rectifying Al2O3/TaOX Memristor and Generation of Physically Unclonable Functions

Physical unclonable function (PUF) represents a widely utilized technology within the domain of hardware security. Memristor is a common source of entropy in PUFs due to its variable resistance during switching. However, in a memristor crossbar array, the issue of sneak path current necessitates the sacrifice of area to incorporate transistors as selectors. In light of the aforementioned considerations, this article proposes a new PUF scheme based on a Pt/TaOX/Al2O3/TiN self-rectifying memristor (SRM), which is capable of attaining a high memory density of 4 F2/bit and exhibits a nonlinear I–V characteristic curve, thereby effectively mitigating the sneak path current issue. Based on the results of the electrical performance test and mechanism analysis, a simulation model of the SRM prepared was established, and a matching entropy source extraction PUF circuit was designed. The simulation results demonstrate that the PUF key exhibits 50.1% uniqueness, 49.6% uniformity, and 99% reliability. Our work provides a promising avenue for the application of SRM in hardware security and effectively advances the development of PUF.