Efficient and Stable Electroluminescent Devices From Sn/ErYb Silicate Co-Doped in Silica Film

Sn and Er2Si2O7:Yb co-doped SiO2 (SiO2-Sn/ Er2Si2O7:Yb) thin films were successfully fabricated by using the sol-gel method. The Er-related near-infrared (NIR) luminescence performance was significantly enhanced by improving the quality of nanocrystals and introducing the energy transfer process of Yb. The designed electroluminescent device based on SiO2-Sn/Er2Si2O7:Yb film achieved visible and dual-wavelength NIR electroluminescence (EL). The Er-related NIR EL integrated intensity of the optimal device increased by more than 2 times compared to the Yb-free device. The optimal ErYb silicate electroluminescent devices also exhibited excellent performance in threshold voltage (~22 V), power efficiency ( $\sim 2.6\times 10 ^{-3}$ ), and operational stability (>600 min), which is promising for the development of efficient and stable silicon-based NIR light sources.