Low Von β -Ga₂O₃ Schottky Diodes With Synergistic Suppression of Bulk and Perimeter Leakage

This work first presents $\beta $ -Ga2O3 trench Schottky barrier controlled Schottky diodes (TSBSDs) with low turn-on voltage ( ${V}_{\text {on}}\text {)}$ and substantially improved blocking performance. The high Schottky barrier formed by PtOx and $\beta $ -Ga2O3 in the trench region can pinch off and shield the tungsten (W) contact region with low barrier, thereby effectively suppressing reverse bulk leakage. In addition, the composite mesa and junction termination extension (MJTE) is used to alleviate the perimeter leakage caused by edge electric field crowding. The fitting and analysis of leakage current versus radius in logarithmic scale is demonstrated to identify the location that dominates leakage. As a result, the leakage is reduced by more than three orders of magnitude owing to the synergistic suppression of bulk and perimeter leakage. Meanwhile, the breakdown voltage increases from 458 V to 1466 V, with a low ${V}_{\text {on}}$ maintained at 0.71 V. In additionally, the TSBSD featuring MJTE maintains the lowest power loss in most duty cycles benefiting from the low ${V}_{\text {on}}$ and leakage current. This work paves the way to improve the operational efficiency of $\boldsymbol {\beta }$ -Ga2O3 Schottky diodes.