An optimised bipolar lateral magnetotransistor

A novel bipolar magnetotransistor for a parallel to surface field is designed in standard integrated bipolar technology. It consists of a pair of identical vertical npn transistors, antisymmetrically oriented, whose bases are made up of two diffusions with different depths. Each transistor is practically constructed of two structures connected in parallel. The only difference between them consists of the thickness and impurity concentration within the base. High sensitivity, low offset, and high linearity over large ranges of magnetic field induction are obtained.